A High-Efficiency D-Band Linear Amplifier With 25.2% Peak PAE and 40-GHz Large-Signal Bandwidth in 250-nm InP DHBT

Yao Li; Yumeng Zhou; Yan Gao; Guozhen Hu; Yan Sun; Weihua Yu

doi:10.1109/LMWT.2025.3570257

A High-Efficiency D-Band Linear Amplifier With 25.2% Peak PAE and 40-GHz Large-Signal Bandwidth in 250-nm InP DHBT

Yao Li, Yumeng Zhou, Yan Gao, Guozhen Hu, Yan Sun^*, Weihua Yu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This letter presents a broadband D-band amplifier in 250-nm indium phosphide double heterojunction bipolar transistors (InP DHBT) technology. To enhance the output power and improve efficiency, the amplifier operates at class-AB and contains two transistors in parallel. The integrated active biasing is designed to mitigate the inherent self-heating effect of bipolar transistors while also improving linearity. The use of a small resistor and an inductor between the base and bias circuity boosts the gain and overall circuit stability. According to the measured results, the proposed single-stage amplifier achieves a maximum gain of 6.2 dB with a flattened bandwidth across the D band and delivers a 40-GHz large-signal bandwidth at output power levels exceeding 6 dBm. The measured maximum P_sat and PAE achieve 9.2 dBm and 25.2% at 130 GHz under the power dissipation of 25.1 mW within a power supply of 1.2 V, respectively. The compact chip occupies 0.55 ⨯ 0.47 mm, with an active area of 0.09 mm². The proposed monolithic microwave integrated circuit (MMIC) achieves excellent PAE and bandwidth performance, making it possible for wireless systems exceeding 100 GHz.

Original language	English
Pages (from-to)	1356-1359
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	35
Issue number	9
DOIs	http://doi.org/10.1109/LMWT.2025.3570257
Publication status	Published - 2025
Externally published	Yes

Keywords

Active biasing
D-band amplifier
indium phosphide double heterojunction bipolar transistor (InP DHBT)
monolithic microwave integrated circuit (MMIC)

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10.1109/LMWT.2025.3570257

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title = "A High-Efficiency D-Band Linear Amplifier With 25.2\% Peak PAE and 40-GHz Large-Signal Bandwidth in 250-nm InP DHBT",

abstract = "This letter presents a broadband D-band amplifier in 250-nm indium phosphide double heterojunction bipolar transistors (InP DHBT) technology. To enhance the output power and improve efficiency, the amplifier operates at class-AB and contains two transistors in parallel. The integrated active biasing is designed to mitigate the inherent self-heating effect of bipolar transistors while also improving linearity. The use of a small resistor and an inductor between the base and bias circuity boosts the gain and overall circuit stability. According to the measured results, the proposed single-stage amplifier achieves a maximum gain of 6.2 dB with a flattened bandwidth across the D band and delivers a 40-GHz large-signal bandwidth at output power levels exceeding 6 dBm. The measured maximum Psat and PAE achieve 9.2 dBm and 25.2\% at 130 GHz under the power dissipation of 25.1 mW within a power supply of 1.2 V, respectively. The compact chip occupies 0.55 ⨯ 0.47 mm, with an active area of 0.09 mm2. The proposed monolithic microwave integrated circuit (MMIC) achieves excellent PAE and bandwidth performance, making it possible for wireless systems exceeding 100 GHz.",

keywords = "Active biasing, D-band amplifier, indium phosphide double heterojunction bipolar transistor (InP DHBT), monolithic microwave integrated circuit (MMIC)",

author = "Yao Li and Yumeng Zhou and Yan Gao and Guozhen Hu and Yan Sun and Weihua Yu",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2025",

doi = "10.1109/LMWT.2025.3570257",

language = "English",

volume = "35",

pages = "1356--1359",

journal = "IEEE Microwave and Wireless Technology Letters",

issn = "2771-957X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - A High-Efficiency D-Band Linear Amplifier With 25.2% Peak PAE and 40-GHz Large-Signal Bandwidth in 250-nm InP DHBT

AU - Li, Yao

AU - Zhou, Yumeng

AU - Gao, Yan

AU - Hu, Guozhen

AU - Sun, Yan

AU - Yu, Weihua

PY - 2025

Y1 - 2025

N2 - This letter presents a broadband D-band amplifier in 250-nm indium phosphide double heterojunction bipolar transistors (InP DHBT) technology. To enhance the output power and improve efficiency, the amplifier operates at class-AB and contains two transistors in parallel. The integrated active biasing is designed to mitigate the inherent self-heating effect of bipolar transistors while also improving linearity. The use of a small resistor and an inductor between the base and bias circuity boosts the gain and overall circuit stability. According to the measured results, the proposed single-stage amplifier achieves a maximum gain of 6.2 dB with a flattened bandwidth across the D band and delivers a 40-GHz large-signal bandwidth at output power levels exceeding 6 dBm. The measured maximum Psat and PAE achieve 9.2 dBm and 25.2% at 130 GHz under the power dissipation of 25.1 mW within a power supply of 1.2 V, respectively. The compact chip occupies 0.55 ⨯ 0.47 mm, with an active area of 0.09 mm2. The proposed monolithic microwave integrated circuit (MMIC) achieves excellent PAE and bandwidth performance, making it possible for wireless systems exceeding 100 GHz.

AB - This letter presents a broadband D-band amplifier in 250-nm indium phosphide double heterojunction bipolar transistors (InP DHBT) technology. To enhance the output power and improve efficiency, the amplifier operates at class-AB and contains two transistors in parallel. The integrated active biasing is designed to mitigate the inherent self-heating effect of bipolar transistors while also improving linearity. The use of a small resistor and an inductor between the base and bias circuity boosts the gain and overall circuit stability. According to the measured results, the proposed single-stage amplifier achieves a maximum gain of 6.2 dB with a flattened bandwidth across the D band and delivers a 40-GHz large-signal bandwidth at output power levels exceeding 6 dBm. The measured maximum Psat and PAE achieve 9.2 dBm and 25.2% at 130 GHz under the power dissipation of 25.1 mW within a power supply of 1.2 V, respectively. The compact chip occupies 0.55 ⨯ 0.47 mm, with an active area of 0.09 mm2. The proposed monolithic microwave integrated circuit (MMIC) achieves excellent PAE and bandwidth performance, making it possible for wireless systems exceeding 100 GHz.

KW - Active biasing

KW - D-band amplifier

KW - indium phosphide double heterojunction bipolar transistor (InP DHBT)

KW - monolithic microwave integrated circuit (MMIC)

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U2 - 10.1109/LMWT.2025.3570257

DO - 10.1109/LMWT.2025.3570257

M3 - Article

AN - SCOPUS:105006850907

SN - 2771-957X

VL - 35

SP - 1356

EP - 1359

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 9

ER -

A High-Efficiency D-Band Linear Amplifier With 25.2% Peak PAE and 40-GHz Large-Signal Bandwidth in 250-nm InP DHBT

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Keywords

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