Study on the Mechanism of Phase Transition of VO2 with Low-Concentration W Doping

Xiaoyue Li, Yixin Wang, Hong Li, Sujun Shi, Bing Zheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

As a phase transition material, the application of VO2 is hindered by its phase transition temperature which is higher than room temperature, and elemental doping is an effective method to modulate the phase transition temperature. Here, we synthesized pure and W-doped VO2 via a hydrothermal method. The crystal structures, morphology, and phase transition behaviors were characterized by x-ray diffraction, field-emission scanning electron microscopy and differential scanning calorimetry measurements, respectively. The temperature of the phase transition sharply decreased from 67.5°C down to 8.5°C by 3 at.% W doping. We also performed first-principles calculations to explore the atomic and electronic structures of pure and W-doped VO2. We found that V atoms along the c axis in the W-doped R-phase structure paired and tilted to form a V dimerized structure similar to the M1 phase. Significant modifications in the electronic structures of W-doped VO2 were also observed, collectively reducing the energy barrier for the phase transformation, leading to the observed decrease in transition temperature. The metal-insulator transition temperature (TMIT) decreased with increasing doping concentration. Our theoretical investigations provided a deeper interpretation of the mechanism underlying the TMIT changes induced by W doping.

Original languageEnglish
JournalJournal of Electronic Materials
DOIs
Publication statusAccepted/In press - 2025
Externally publishedYes

Keywords

  • first-principles calculation
  • phase transition temperature
  • Vanadium dioxide
  • W doping

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